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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

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ChongMing Group (HK) Int'l Co., Ltd

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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

Model Number : 2N2222A

Certification : new & original

Place of Origin : original factory

MOQ : 100pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 20000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 500 mW Through Hole TO-18

collector-base voltage : 75 V

collector-emitter voltage : 40 V

emitter-base voltage : 6 V

collector current (DC) : 800 mA

peak collector current : 800 mA

operating ambient temperature : −65 to +150 °C

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NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

PIN	DESCRIPTION
1	emitter
2	base
3	collector, connected to case

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
_VCBO	collector-base voltage 2N2222 2N2222A	open emitter	- -	60 75	V V
V_CEO	collector-emitter voltage 2N2222 2N2222A	open base	- -	30 40	V V
V_EBO	emitter-base voltage 2N2222 2N2222A	open collector	- -	5 6	V V
I_C	collector current (DC)		-	800	mA
I_CM	peak collector current		-	800	mA
I_BM	peak base current		-	200	mA
P_tot	total power dissipation	T_amb ≤ 25 °C	-	500	mW
P_tot	total power dissipation	T_case ≤ 25 °C	-	1.2	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	200	°C
T_amb	operating ambient temperature		-65	+150	°C

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Product Tags:

multi emitter transistor

silicon power transistors

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